1 number of sets of parameters to follow 1.0 shank slope (dimensionless) = tan (90-(theta/2)) where theta is shank opening angle 1.0 tip-sample separation (nm) 1. tip radius (nm) 0.0 radius of hemispherical protrusion at end of tip (nm) 0.0 contact potential (work function of tip relative to sample) (eV) 0. donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 2. band gap (eV) 0.001 donor binding energy (eV) 0.001 acceptor binding energy (eV) 0.1 conduction band effective mass 0.1 heavy hole effective mass 0.1 light hole effective mass 0.1 split-off hole effective mass 0.0 spin-orbit splitting (eV) 0 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 3 inversion indicator (1 or 2 to suppress VB or CB occupation, 3 for both, 0 otherwise) 16.3 dielectric constant 0. temperature (K) 0.0 density of FIRST distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0.0 density of SECOND distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0 indicator for temperature dependence of surface state occupation (0=don't include it, 1=include it) 32 starting number of radial grid points 32 starting number of grid points in the vacuum 32 starting number of grid points in the semiconductor 1.0 multiplicative parameter for initial grid size (if <= 0 then specify grid size) 3 number of scaling steps for computation of potential 20000 3000 2000 2000 2000 2000 2000 max no of iterations in each scaling step 1.e-3 1.e-3 1.e-3 1.e-3 1.e-3 1.e-3 1.e-3 convergence parameter for each scaling step 20000 size of table of charge densities (20000 high precision, 5000 low precision) 2 output parameter (=1 for basic output, 2 for equi-potential contours, 3 for entire potential) 1 ***************** number of voltage points 3 6 number of contours 0. spacing of potential contours (if 0, use computed value according to number of contours)