1 number of sets of parameters to follow 1.0 shank slope (dimensionless) = tan (90-(theta/2)) where theta is shank opening angle 1. tip-sample separation (nm) 1. tip radius (nm) 0. radius of hemispherical protrusion at end of tip (nm) 9. thickness of film (nm) 0. contact potential (work function of tip relative to sample) (eV) 2 number of different types of semiconductor regions 1 region to use in computing Fermi level in film+substrate 0. REGION 1 (film) - donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 2. band gap (eV) 0 valence band offset (eV) 0.001 donor binding energy (eV) 0.001 acceptor binding energy (eV) 1. conduction band effective mass 0.63 heavy hole effective mass 0.63 light hole effective mass 1. split-off hole effective mass 0. spin-orbit splitting (eV) 0 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 3 inversion indicator (1 or 2 to suppress VB or CB occupation, 3 for both, 0 otherwise) 1.e18 REGION 2 (substrate) - donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 2. band gap (eV) 0 valence band offset (eV) 0.006 donor binding energy (eV) 0.028 acceptor binding energy (eV) 0.0635 conduction band effective mass 0.643 heavy hole effective mass 0.081 light hole effective mass 0.172 split-off hole effective mass 0.341 spin-orbit splitting (eV) 0 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 0 inversion indicator (1 or 2 to suppress VB or CB occupation, 3 for both, 0 otherwise) 4. dielectric constant in film 10. dielectric constant in substrate 300. temperature (K) 2 number of different types of surface areas 0.0e12 AREA 1 (surface) - density of FIRST distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0.0e12 density of SECOND distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0.0e13 AREA 2 (interface) - density of FIRST distribution of surface states (cm^-2 eV^-1) 1.2 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0.0e12 density of SECOND distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 0 indicator for temperature dependence of surface state occupation (0=don't include it, 1=include it) 16 starting number of radial grid points 4 starting number of grid points in the vacuum 32 starting number of grid points in the semiconductor substrate 8 starting number of grid points in the film 1.33333 0.2666 multiplicative parameter for initial grid size (if <= 0 then specify grid size) 3 number of scaling steps for computation of potential 5000 3000 2000 2000 max no of iterations in each scaling step 1.e-4 1.e-4 1e-4 1e-4 convergence parameter for each scaling step 20000 size of table of charge densities (20000 high precision, 5000 low precision) 1 output parameter (=1 for basic output, 2 for equi-potential contours, 3 for entire potential) 1 ***************** number of voltage points -1 6 number of contours 0. spacing of potential contours (if 0, use computed value according to number of contours)