1 number of sets of parameters to follow 1.0 shank slope (dimensionless) = tan (90-(theta/2)) where theta is shank opening angle 0.9 tip-sample separation (nm) 70. tip radius (nm) 0. radius of hemispherical protrusion at end of tip (nm) 0.43 contact potential (work function of tip relative to sample) (eV) 1.e18 donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 1.42 band gap (eV) 0.006 donor binding energy (eV) 0.028 acceptor binding energy (eV) 0.0635 conduction band effective mass 0.643 heavy hole effective mass 0.081 light hole effective mass 0.172 split-off hole effective mass 0.341 spin-orbit splitting (eV) 12.9 dielectric constant 300. temperature (K) 0.050 modulation voltage (V) 1 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 1 inversion indicator (1 or 2 to suppress VB or CB occupation, 3 for both, 0 otherwise) 0 indicator for temperature dependence of surface state occupation (0=don't include it, 1=include it) 4.4e14 density of FIRST distribution of surface states (cm^-2 eV^-1) 0.125 charge neutrality level (eV) 0.25 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 1.625 centroid energies for Gaussian distribution (eV) 0.0 density of SECOND distribution of surface states (cm^-2 eV^-1) 0.0 charge neutrality level (eV) 0.0 FWHM for Gaussian distribution (use uniform distribution if zero) (eV) 0.0 centroid energies for Gaussian distribution (eV) 4.07 electron affinity of semiconductor 8.0 Fermi energy of tip (eV) 16 starting number of radial grid points 4 starting number of grid points into the vacuum 32 starting number of grid points into the semiconductor 0.5 scaling parameter for grid size 3 number of scaling steps for computation of potential 5000 3000 2000 2000 max no of iterations in each scaling step 1.e-4 1.e-4 1e-4 1e-4 convergence parameter for each scaling step 20000 size of table of charge densities (20000 high precision, 5000 low precision) 20 number of parallel wavevectors for computation of current (50 high precision, 20 low precision) 20 number of energies for computation of current (50 high precision, 20 low precision) 20 target expansion factor for integration of Schrodinger eqn (100 high precision, 10 low precision) 0.75 fraction of semiconductor depth to include in integration 1 output parameter (=1 for basic output, 2 for equi-potential contours, 3 for entire potential) 1 ***************** number of voltage points -2.0 0. -s(V) ramp for V<0 (normally positive) (nm/V) 0. s(V) ramp for V>0 (normally positive) (nm/V) -2.0 starting voltage of spectrum (V) 6 number of contours (needed for output parameter = 2) 0. spacing of potential contours (if 0, use computed value according to number of contours)