SEP, CONTACT POTENTIAL = 0.89999998 0.43000001 DOPING = 9.99999984E+17 0.0000000 RAD, SLOPE, ANGLE = 70.000000 1.0000000 90.000000 FIRST DISTRIBUTION OF SURFACE STATES: SURFACE STATE DENSITY, EN = 4.40000005E+14 0.12500000 FWHM, ECENT = 0.25000000 1.6250000 SECOND DISTRIBUTION OF SURFACE STATES: SURFACE STATE DENSITY, EN = 9.99999983E+12 0.70999998 FWHM, ECENT = 0.0000000 0.0000000 FERMI-LEVEL = 1.4656057 CARRIER DENSITY IN CB, VB = 1.00000122E+18 0.0000000 SEPARATION = 0.89999998 BIAS, TIP POTENTIAL = -1.3000000 -0.86999995 1-D ESTIMATE OF DEPLETION WIDTH (NM) = 37.760639 ESTART,EEND,NE = -2.5411029 5.5869250 20000 COMPUTING TABLE OF BULK CHARGE DENSITIES COMPUTING TABLE OF SURFACE CHARGE DENSITIES ETAT, A, Z0, C = 0.70710677 98.994949 -69.099998 -0.98714286 NR,NS,NV = 16 32 4 DELR,DELS,DELV = 2.3600399 1.1800200 0.22499993 LARGEST RADIUS, DEPTH = 489.32877 979.25092 SOLUTION # 1 ITER,PHI0 = 100 0.11617675 ITER,PHI0 = 200 0.13380682 ITER,PHI0 = 300 0.13941993 ITER,PHI0 = 400 0.14122662 ITER,PHI0 = 500 0.14185752 ITER,PHI0 = 600 0.14199272 ITER,PHI0 = 700 0.14209439 ITER,PHI0 = 800 0.14213111 NR,NS,NV = 32 64 8 DELR,DELS,DELV = 1.1800200 0.59000999 0.11249997 LARGEST RADIUS, DEPTH = 979.25092 1958.7908 SOLUTION # 2 ITER,PHI0 = 100 0.14401953 ITER,PHI0 = 200 0.14424445 ITER,PHI0 = 300 0.14428693 ITER,PHI0 = 400 0.14426807 NR,NS,NV = 64 128 16 DELR,DELS,DELV = 0.59000999 0.29500499 5.62499836E-02 LARGEST RADIUS, DEPTH = 1958.7908 3917.7432 SOLUTION # 3 ITER,PHI0 = 100 0.14484802 ITER,PHI0 = 200 0.14498395 ITER,PHI0 = 300 0.14505644 NUMBER OF ITERATIONS = 300 BAND BENDING AT MIDPOINT = 0.14505644 RETURN FROM SEMTIP2, NR,NS,NV,IERR = 64 128 16 0 COMPUTATION OF CURRENT: # GRID POINTS INTO SEMICONDUCTOR USED FOR INTEGRATION = 96 DEPTH INTO SEMICONDUCTOR USED FOR INTEGRATION = 58.035690 VB localized state at energy 8.34632888E-02 VB localized state at energy 2.54018717E-02 number of VB light-hole localized states = 2 VB localized state at energy 0.11975167 VB localized state at energy 8.34632888E-02 VB localized state at energy 6.16902560E-02 VB localized state at energy 3.99172269E-02 VB localized state at energy 2.54018717E-02 VB localized state at energy 1.08865183E-02 VB localized state at energy 3.62884207E-03 number of VB heavy-hole localized states = 7 number of VB split-off localized states = 0 valence band current ext,loc = -3.46586867E-19 -5.02927864E-17 number of CB localized states = 0 conduction band current ext,loc = -5.27982768E-17 0.0000000 MIN, MAX POTENTIAL VALUES = -0.86999995 0.47365570 CONTOUR SPACING = 0.19195081 PRESS THE ENTER KEY TO EXIT