1 number of sets of parameters to follow 1.0 shank slope (dimensionless) = tan (90-(theta/2)) where theta is shank opening angle 1.0 tip-sample separation (nm) 10. tip radius (nm) 0. radius of hemispherical protrusion at end of tip (nm) 3. sample bias voltage relative to tip (V) 0. contact potential (work function of tip relative to sample) (eV) 1.e18 donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 3. band gap (eV) 0.001 donor binding energy (eV) 0.001 acceptor binding energy (eV) 0.1 conduction band effective mass 0.1 valence band effective mass 12.9 dielectric constant 0. temperature (K) 0 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 0 inversion indicator (1 or 2 to suppress VB or CB occupation, 3 for both, 0 otherwise) 0 density of surface states (cm^-2 eV^-1) 0 charge neutrality level (eV) 64 starting number of radial grid points 8 starting number of grid points into the vacuum 64 starting number of grid points into the semiconductor 0.5 scaling parameter for grid size 4 number of scaling steps 50000 20000 10000 3000 1000 max no of iterations in each scaling step 1.e-4 1.e-4 1.e-4 1.e-4 1.e-4 convergence parameter for each scaling step 2 output parameter (=1 for basic output, 2 for equi-potential contours, 3 for entire potential) 6 number of contours (needed for output parameter = 2) 0 spacing of potential contours (if 0, use computed value according to number of contours)