1 number of sets of parameters to follow 1.0 shank slope (dimensionless), slope = tan (theta/2) where theta is shank opening angle 1.0 tip-sample separation (nm) 10. tip radius (nm) 0. radius of hemispherical protrusion at end of tip (nm) 3. tip electrostatic potential (V) (relative to a point far inside the semiconductor) 1.e18 donor concentration (cm^-3) 0. acceptor concentration (cm^-3) 3. band gap (eV) 0.001 donor binding energy (eV) 0.001 acceptor binding energy (eV) 0.1 conduction band effective mass 0.1 valence band effective mass 12.9 dielectric constant 0. temperature (K) 0 semiconductor degeneracy indicator (=0 for nondegenerate, =1 for degenerate) 0 density of surface states 0 charge neutrality level 64 starting number of radial grid points 64 starting number of grid points into the vacuum (program adjusts this if net number < 1) 64 starting number of grid points into the semiconductor 0.5 scaling parameter for grid size 4 number of scaling steps 50000 20000 10000 3000 max no of iterations in each scaling step 1.e-3 1.e-3 1.e-3 1.e-3 convergence parameter for each scaling step 2 output parameter (=1 for basic output, 2 for equi-potential contours, 3 for entire potential) 6 number of contours (needed for output parameter = 2) 0 spacing of potential contours (if 0, use computed value according to number of contours)