Robust Anisotropic 3D Grid Generation Using A Normal Offsetting Approach

Numerical Grid Generation in Computational Field Simulations, The International Society of Grid Generation, pp.305-314, September 2000

MESHING
RESEARCH
CORNER

Luis Villablanca, Norbert Strecker, and Wolfgang Fichtner
Integrated Systems Engineering AG
CH-8008 Zürich, Switzerland

Abstract

In semiconductor process and device simulation it is often advantegeous for mesh lines to be parallel and perpendicular to material interfaces or isosurfaces of some data function.To achieve this a modified Advancing Front method is used to place points. In order to consolidate the Delaunay criterion and the demand for anisotropic elements, images of surfacepoints are placed in normal direction to the surface. In that matter layers of prismatic elements (one per surface triangle) are grown on the surface into the interior. The final grid is extracted indirectly from this construct by a Delaunay type method. To be useful in process simulation this generator has to work reliable.