C   ******************** POTCUT1 ************************
C
C   MAKE A CUT OF THE POTENTIAL ALONG A GIVEN LATERAL POSITION STARTING
C   FROM 1D GRID, BY INTERPOLATING BETWEEN SURROUNDING GRID POINTS
C
C   VERSION 6.0 - FEB/11 - CONSTRUCTED FROM POTCUT2 VERSION 1.0
C
C   INPUT PARAMETERS:
C      VAC,SEM,VSINT ARRAYS, TOGETHER WITH S,DELS, ETC.
C
C   OUTPUT PARAMETERS:
C      BARR=POTENTIAL VALUES THROUGH VACUUM AND INCLUDING SURFACE
C      PROF=POTENTIAL VALUES THROUGH SEMICONDUCTOR
C      NBARR1=NUMBER OF POINTS IN VACUUM BARRIER, PLUS ONE FOR SURFACE
C
      SUBROUTINE POTCUT1(VAC,SEM,VSINT,NVDIM,NSDIM,NV,NS,SEP,S,DELV,
     &   Pot0,BIAS,CHI,CPot,EGAP,BARR,PROF,NBARR1,NVDIM1,NVDIM2,
     &   IWRIT)
C
      DIMENSION VAC(2,NVDIM),SEM(2,NSDIM),VSINT(2),
     &   S(NSDIM),BARR(NVDIM1),PROF(NSDIM)
      real kappa,lambda
C
C   CONSTRUCT VACUUM BARRIER (FIRST POINT IS THE SURFACE)
C
      Pot0=VSINT(1)
      NBARR1=0
      BARR(1)=chi+egap+Pot0
      DO 100 J=1,NV-1
         BARR(J+1)=chi+egap+VAC(1,J)
100   CONTINUE
      BARR(J+1)=chi+egap+(BIAS+CPot)
      NBARR1=J+1
c
c   CONSTRUCT POTENTIAL PROFILE IN SEMICONDUCTOR
c
      DO 500 J=1,NS
         PROF(J)=SEM(1,J)
500   CONTINUE
      RETURN
      END