SEMITIP V6, UniIntSC1, Example 1: n-type GaAs(110), with no surface states

Click here for input/output files for Example 1

This example shows a theoretical spectrum for GaAs in the physically incorrect situation of no surface states, where a substantial accumulation current is seen for all negative voltages. The result should be compared with example 1 of UniInt1 which is the physically correct situation, with a band of surface states resonant with the conduction band acting to restrict tip induced band bending and hence preventing any significant accumulation of the electrons at the surface. (Of course, for other surfaces, that type of band may not exist or it may be higher in energy, so that surface accumulation will indeed occur). Output for the conductance goes to FORT.93, FORT.94, and FORT.15, for the valence band (VB), conduction band (CB), and their sum, respectively. When plotted these appear as:

where the black circles show the sum of the VB and CB, the green x-marks show the VB, and the red x-mark show the CB. This result can be compared to example 1 of UniIntSC2 which is the corresponding situation in 2D. The energy of the accumulation states can be plotted from column 3 vs. column 1 of FORT.60,
Greater tip-induced band bending occurs in the present 1D case than for the 2D case, as expected, so that for a given sample voltage the accumulation states are deeped (lower energy) in 1D than 2D.