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Nanoporous
SiC and GaN

Papers and Reports

  1. Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan, Morphology and Effects of Hydrogen Etching of Porous SiC, J. Appl. Phys 92, 4070 (2002).
  2. F. Yun, M. A. Reshchikov, L. He, T. King, D. Huang, H. Morkoç, C. K. Inoki, and T. S. Kuan, Microstructure and Optical Properties of GaN films grown on porous SiC substrate by MBE, Mat. Res. Soc. Symp. Proc. Vol. 719, F1.3.1 (2002).
  3. C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, and R. M. Feenstra, Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy, Mat. Res. Soc. Symp. Proc. Vol. 722, K1.3.1 (2002).
  4. F. Yun, M. A. Reshchikov, L. He, H. Morkoç, C. K. Inoki, and T. S. Kuan, Growth of GaN Films on Porous SiC Substrate by Molecular Beam Epitaxy, Appl. Phys. Lett. 81, 4142 (2002).
  5. B. K. Rao and P. Jena, Giant Magnetic Moments of Nitrogen-Doped Mn Clusters and their Relevance to Ferromagnetism in Mn-Doped GaN, Phys. Rev. Lett. 89, 185504 (2002).
  6. B. Waddell, P. G. Campbell, and P. N. Kumta, Chemical Synthesis and Characterization of Nanostructured Hydroxyapatite Coatings on Porous and Nonporous SiC, submitted to Materials Science and Engineering B (2003).
  7. S. Bai, Yue Ke, Y. Shishkin, O. Shigiltchoff, R.P. Devaty, W.J. Choyke, D. Strauch, B. Stojetz, B. Dorner, D. Hobgood, J. Serrano, M. Cardona, H. Nagasawa, T. Kimoto, and L.M. Porter, Four Current Examples of Characterization of Silicon Carbide, Mat. Res. Soc. Symp. Proc. Vol. 742, K3.1.1 (2003).
  8. G. P. Das, B. K. Rao and P. Jena, Ferromagnetism in Mn-doped GaN: From clusters to crystals, Phys. Rev. B 68, 035207 (2003).
  9. Balaji Raghothamachar, Jie Bai, William M. Vetter, Perena Gouma, Michael Dudley, Marina Mynbaeva, Matthew T. Smith, and Stephen E. Saddow, Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them, Mat. Res. Soc. Symp. Proc. Vol. 742, K2.11.1 (2003).
  10. C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, and I. Adesida, Growth of GaN on Porous GaN and SiC Substrates, J. Electron. Mater. 32, 855 (2003).
  11. Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan, Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity , J. Vac. Sci. Technol. B 21, 1812 (2003).
  12. C. K. Inoki, T. S. Kuan, Ashutosh Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, and I. Adesida, Growth of GaN on porous SiC and GaN substrates, Phys. Stat. Sol. (a) 200, 44 (2003).
  13. H.J. von Bardeleben, J.L. Cantin, M. Mynbaeva, S.E. Saddow, Y. Shishkin, R.P. Devaty, W.J. Choyke, EPR Studies of SiC/SiO2 Interfaces in n-type 4H- and 6H Oxidized Porous SiC, Electrochemical Society Proceedings Volume 2003-02, pp. 39-51 (2003).
  14. M. Mynbaeva, N. Kuznetsov, A. Lavrentev, S. E. Saddow, J. T. Wolan,V. Ivantsov, A. Syrkin, A. Fomin, Porous SiC: new applications through in- and out- dopant diffusion, European Conference on SiC and Related Materials ( ECSCRM'02 ), Linkping, Sweden, September 1 - 5, 2002.
  15. Stephen E. Saddow, Marina Mynbaeva and Mike MacMillan, Porous SiC Technology, Chapter 8 in Silicon Carbide: materials, devices and applications , Editors: Zhe Chuan FENG and Jian H. ZHAO, as a volume of the book Series: Optoelectronic Properties of Semiconductors and Superlattices , Editor in chief: M. O. Manasreh, Publisher: Taylor and Francis Engineering, to be published by Oct. 2003.
  16. M. G. Mynbaeva, K. D. Mynbaev, V. A. Ivantsov , A. A. Lavrent’ev, B. A. Grayson, and J. T. Wolan, Semi-insulating porous SiC substrates, Semicond. Sci. Technol. 18 602–606, (2003).
  17. P. A. Ivanov, M. Mynbaeva and S. E. Saddow, Effective carrier density in porous silicon carbide, Semiconductor Science and Technology 19, 319 (2003).
  18. Spintronics: the latest revolution in semiconductors?, G.P. Das, B.K. Rao and P. Jena, Sol. St. Phys. (India) 45, 592 (2002) Proceedings of 45th DAE Solid State Physics Symposium (Allied Publishers, Mumbai, 2003)
  19. I. S. Kim and and P. N. Kumta, Sol-get synthesis and characterization of nanostructured hydroxyapatite powder, Mat. Sci. and Eng. B 111, 232 (2004).
  20. Z-Q. Fang, D.C. Look, R. Chandrasekaran, S. Rao, and S.E. Saddow, Electrical characteristics of a 6H-SiC layer grown by chemical vapor deposition on porous SiC substrate, J. of Electronic Mater. 33, 456 (2004).
  21. Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, D. D. Koleske, Combined MOCVD and MBE growth of GaN on porous SiC, MRS Proc. Vol. 798, Y9.6.1 (2004).
  22. D.C. Look, Z-Q. Fang, S. Soloviev, T.S. Sudarshan, and J.J. Boeckl, Anomalous capture and emission from internal surfaces of semiconductor voids: nanopores in SiC, Phys. Rev. B 69, 195205 (2004).
  23. J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC, Phys. Rev. Lett. 92, 015502 (2004).
  24. G.T. Andrews, M.J. Clouter, B. Mroz, Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke, Brillouin Scattering Studies of Surface Acoustic Waves in SiC, Mater. Sci. Forum Vols. 457-460, 653 (2004).
  25. H.J. von Bardeleben, J.L. Cantin, Y. Shishkin, R.P. Devaty and W.J. Choyke, Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC, Mater. Sci. Forum Vols. 457-460, 1457 (2004).
  26. A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Y. Ke, R.P. Devaty and W.J. Choyke, Porous Silicon Carbide as a Membrane for Implantable Biosensors, Mater. Sci. Forum Vols. 457-460, 1463 (2004).
  27. Y. Shishkin, W.J. Choyke and R.P. Devaty, Triangular Pore Formation in Highly Doped n-Type 4H SiC, Mater. Sci. Forum Vols. 457-460, 1467 (2004).
  28. Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke, Porous Structure of Anodized p-Type 6H SiC, Mater. Sci. Forum Vols. 457-460, 1471 (2004).
  29. Q. Wang, Q. Sun, P. Jena, and Y. Kawazoe, Antiferromagnetic coupling driven by bond length contraction near Ga(1-x)Mn(x)N film surface, Phys. Rev. Lett. 93, 155501 (2004).
  30. S. Dogan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, and H. Morkoç, The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy, Appl. Phys. Lett. 85, 1547 (2004).
  31. A. Rosenbloom, D. Sipe, Y. Shishkin, Y. Ke, R.P. Devaty, and W.J. Choyke, Nanoporous SiC: A Candidate Semi-permeable Material for Biomedical Applications, J. Biomed. Microdevices 6, 261 (2004).
  32. Y. Shishkin, W.J. Choyke, and R.P. Devaty, Photoelectrochemical Etching of n-type 4H Silicon Carbide, J. Appl. Phys. 96, 2311 (2004).
  33. Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, Y. Fu, Y. T. Moon, F. Yun, and H. Morkoç, Dislocation density reduction in GaN using porous SiN interlayers , Phys. Stat. Sol. (a) 202, 722 (2005).
  34. F. Yun, S. Dogan, Y. T. Moon, Y. Fu, J. Xu, D. Johnstone, and H. Morkoç, Characterization of MOCVD Grown GaN on Porous SiC Templates, Phys. Stat. Sol. (c) 2, 2087 (2005).
  35. F. Yun, Y. Fu, Y. T. Moon, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith Reduction of Threading Dislocations in GaN Overgrowth by MOCVD on TiN Porous Network Templates, Phys. Stat. Sol. (a) 202, 749 (2005).
  36. Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, H. Morkoç, A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching Phys.Stat. Sol. (a) 202, 718 (2005).
  37. D. Jonhstone, S. Dogan, Y. T. Moon, Y. Fu, J. Xu, F. Yun, J. Leach, H. Morkoç, Deep levels in KOH etched and MOCVD regrown GaN p-n junctions , Phys. Stat. Sol. (c) 2, 2454 (2005).
  38. K. T. Tsen, W. Liang, D. K. Ferry, Hai Lu, William J. Schaff, Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt, Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors, Superlattices and Microstructures 38, 77 (2005).
  39. Ü. Özgür, Y. Fu, Y. T. Moon, F.Yun, H. Morkoç, H. O. Everitt, S. S. Park and K. Y. Lee, Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates, Appl. Phys. Lett. 86, 232106 (2005).
  40. D.C. Look, Z-Q. Fang, A. Krtschil, A. Krost, Giant traps associated with extended defects in GaN and SiC, Phys. Stat. Sol. (c), to appear.
  41. Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke, Fabrication and morphology of porous p-type SiC, J. Appl. Phys. 97, 044908 (2005).
  42. Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke, A short synopsis of the current status of porous SiC and GaN, Materials Science Forum Vols. 483-485, pp. 251-256 (2005).
  43. H.J. von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, R.P. Devaty and W.J. Choyke, Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxydized porous silicon carbide single crystals, Materials Science Forum Vols. 483-485, pp. 273-276 (2005).
  44. H.J. von Bardeleben, J.L. Cantin, I.C. Vickridge, Yongwei Song, S. Dhar, L.C. Feldman, J.R. Williams, L. Ke, Y. Shishkin, R.P. Devaty and W.J. Choyke, Modification of the oxide/semiconductor interface by high temperature NO treatments: a combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC, Materials Science Forum Vols. 483-485, pp. 277-280 (2005).
  45. R. Myers, O. Kordina, Z. Shishkin, S. Rao, R. Everly, S.E. Saddow, Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive, Mat. Sci. Forum. Vols. 483-485 p. 73 (2005).
  46. R.L. Myers, K.D. Hobart, M. Twigg, S. Rao, M. Fatemi, F.J. Kub, and S.E. Saddow, Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates, Mat. Res. Soc. Symp. Proc. Vol. 815, p. 145 (2004).
  47. S. Rao, S.E. Saddow, F. Bergamini, R. Nipoti, Y. Emirov, and A. Agrawal, A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient, Mat. Res. Soc. Symp. Proc. Vol. 815, p. 229 (2004).
  48. Fawcett, T. J., Wolan, J. T., Myers, R. L., Walker, J., and Saddow, S. E., Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development Applied Physics Letters 85, 416-418 (2004).
  49. G. P. Das, B. K. Rao, and P. Jena, Ferromagnetism in Cr-doped GaN: A First Principle Calculation, Phys. Rev. B 69, 214422 (2004).
  50. Q. Wang, Q. Sun, P. Jena, and Y. Kawazoe, Antiferromagnetic coupling driven by bond length contraction near Ga1-xMnx film surface, Phys. Rev. Lett. 93, 155501 (2004).
  51. Q. Wang, Q. Sun, P. Jena, and Y. Kawazoe, Ferromagnetic GaN-Cr Nanowires, Nano Letters 5, 1587 (2005).
  52. Q. Wang, Q. Sun, and P. Jena, Ab Initio Study of Ferromagnetism in Ga1-xCrxN Thin Film, Phys. Rev. B 72, 045435 (2005).
  53. Q. Wang, Q. Sun, and P. Jena, Ferromagnetism in Mn-doped GaN Nanowires, Phys. Rev. Lett. 95, 167202 (2005).
  54. . Liu, F. Yun, H. Morkoç, Ferromagnetism of ZnO and GaN: A Review, Journal of Materials Sciences: Materials in Electronics 16, 555 (2005).
  55. Z-Q. Fang, D.C. Look, D.H. Kim, and I. Adesida, Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy, Appl. Phys. Lett. 87, 182115, (2005).
  56. Z-Q. Fang, B. Claflin, D.C. Look, L. Polenta, J. Chen, T. Anderson, and W.C. Mitchel, Deep traps in high-purity semi-insulating 6H-SiC substrates: Thermally stimulated current spectroscopy, Materials Science Forum (2006).
  57. W.C. Mitchel, W.D. Mitchell, S.R. Smith, A.O. Evwaraye, Z-Q. Fang, D.C. Look, and J.R. Sizelove, Deep Level Near EC – 0.55 eV in Undoped 4H-SiC Substrates, Materials Science Forum (2006).
  58. Z-Q. Fang, B. Claflin, D.C. Look, L. Polenta, and W.C. Mitchel, Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates, J. Electronic Mater. 34, 336 (2005).
  59. W.C. Mitchel, W.D. Mitchell, Z-Q. Fang, D.C. Look, S.R. Smith, and H.E. Smith, Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC, submitted to JAP.
  60. Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt, Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers, J. Appl. Phys. 97, 103704 (2005).
  61. F. Yun, T. J. Fawcett, S. Chevtchenko, Y-T. Moon, H. Morkoç, and J. T. Wolan, GaN Resistive Gas Sensors for Hydrogen Detection, Materials Science Forum (2006).
  62. T.J. Fawcett, J.T. Wolan, R.L. Myers, J. Walker, and S.E. Saddow, Hydrogen gas sensors using 3C-SiC/Si epitaxial layers, Materials Science Forum (2006).
  63. F. Yun, S. Chevtchenko, Y-T. Moon, H. Morkoç, T. J. Fawcett, and J.T. Wolan, GaN Resistive Hydrogen Gas Sensors, Appl. Phys. Lett. 87, 073507 (2005).
  64. Y. Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Dogan, H. Morkoç, C. K. Inoki, T. S. Kuan, Lin Zhou and David J. Smith, Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy, Appl. Phys. Lett. 86, 043108 (2005).
  65. A. Sagues, J.T. Wolan, A. De Fex, and T. Fawcett, Impedance Behavior of Nanoporous SiC, Electrochimica Acta 51, 1656-1663 (2006).
  66. T. J. Fawcett, J.T. Wolan, A.L. Spetz, M. Reyes, and S.E. Saddow, Thermal detection mechanism of SiC based hydrogen resistive gas sensors, Appl. Phys. Lett. 89, 182102 (2006).
  67. T. J. Fawcett, M. Reyes, A. Lloyd Spetz, S. E. Saddow, and J. T. Wolan, Thermal detection mechanism of SiC-based resistive gas sensors, Mater. Res. Soc. Symp. Proc. 911, 0911-B12-06 (2006).
  68. A. Kababji and J. T. Wolan, SiC Supported VPO Catalyst for the Partial Oxidation of n-butane to Maleic Anhydride, submitted to Catalysis Today February 2006.
  69. U.Starke, W.Y.Lee, C. Coletti, S.E.Saddow, R.P.Devaty and W.J.Choyke, SiC Pore Surfaces: Surface Studies of 4H-SiC (1102) and 4H-SiC (1102), Appl. Phys. Lett. 88, 031915 (2006).
  70. J.L.Cantin, H.J. von Bardeleben, Yue Ke, R.P.Devaty and W.J.Choyke, Hydrogen Passivation of carbon Pb Like Centers at the 3C- and 4H-SiC/SiO2 Interfaces in Oxidized Porous SiC, Appl. Phys. Lett. 88, 092198 (2006).
  71. Y. Ke, C. Moisson, S. Gaan, R. M. Feenstra, R.P. Devaty and W.J. Choyke, A Comparison of various Surface Finishes and the Effect on the Early Stages of Pore Formation during High Field Etching of SiC, Mat. Sci. Forum 527-529, 743 (2006)
  72. U. Starke, W. Y. Lee, C. Coletti, S. E. Saddow, R. P. Devary, and W. J. Choyke, SiC Pore Surfaces: Surface Studies of 4H-SiC(1102) and 4H-SiC(1102), Mat. Sc. Forum 527-529, 677 (2006)
  73. G.T Andrews, A. Polomska, M.J Clouter, Yue Ke, R.P. Devaty and W.J. Choyke, Brillouin Spectra of Porous p-type 6H SiC, Mat. Sci. Forum 527-529, 747 (2006).
  74. Y. Shishkin, Yue Ke, Fei Yan, R.P. Devaty, W.J. Choyke and S.E.Saddow, CVD Epitaxial Growth of 4H SiC on Porous SiC Substrates, Mat. Sci. Forum 527-529, 255 (2006).
  75. A.J.Rosenbloom, S. Nie, Y. Ke, R.P. Devaty and W.J. Choyke, Columnar Morphology of Porous Silicon Carbide as a Protein-permeable Membrane for Biosensors and other Applications, Mat. Sci. Forum 527-529, 751 (2006).
  76. Yue Ke, F. Yan, R.P.Devaty and W.J.Choyke, Columnar Pore Growth in n-type 6H SiC, Mat. Sci. Forum 527-529, 739 (2006).
  77. Shu Nie and R. M. Feenstra, Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces, Mat. Sci. Forum 527-529, 1023 (2006).
  78. M. Reyes, M. Waits, S.P. Rao, Y. Shishkin, B. Geil, J.T. Wolan, and S.E. Saddow, Growth of 3C-SiC on Si molds for MEMS applications, Mat. Sci. Forum 527-529, 307 (2006).
  79. R.L. Myers, Y. Shishkin, O. Kordina, I. Haselbarth, and S.E. Saddow, High Epitaxial Growth Rate of 4H-SiC using Horizontal Hot-Wall CVD, Mat. Sci. Forum 527-529, 187 (2006).
  80. Y. Shishkin, O. Kordina, Bulk Growth Bulk of 6H-SiC on Non-Basal Quasi Polar Faces, accepted for publication in Journal of Crystal Growth.
  81. R.L. Myers, Y. Shishkin, O. Kordina, and S.E. Saddow, High growth rates (>30 µm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor, J. Cryst. Growth 285 486 (2005).
  82. M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow, High growth rates of single crystal 3C-SiC on Si (001) by hot-wall CVD, submitted to the Journal of Crystal Growth.
  83. A. Maltsev, S.E. Saddow, A.M. Hoff, Y. Shishkin, and E. Oborina, Oxide of Non-Basal Quasi-Polar 6H-SiC Surfaces , submitted to the Journal of Applied Physics.
  84. Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, L. Zhou, D. J. Smith, C. K. Inoki, and T. S. Kuan, Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy, J. Appl. Phys. 99, 033518 (2006).
  85. J. Xie, Y. Fu, Ü. Özgür, Y. T. Moon, F.Yun, H. Morkoç, H. O. Everitt, A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, Characterization of GaN epitaxial films grown on SiN and TiN porous network templates, Proc. SPIE, Photonics West 2006.
  86. F. Yun, Y. T. Moon, Y. Fu, K. Zhu, Ü. Özgür, H. Morkoç, C. K. Inoki, T. S. Kuan, A. Sagar, and R. M. Feenstra, Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy, J. Appl. Phys. 98, 123502 (2005).
  87. Ü. Özgür, C. W. Litton, Y. Fu, Y.-T. Moon, F. Yun, H. O. Everitt, and H. Morkoç, Improved Carrier Decay Times in GaN Epitaxial Films Grown on SiN and TiN Porous Network Templates, Mat. Sci. Forum, in press.
  88. Y. T. Moon, J. Xie, C. Liu, Y. Fu, X. Ni, N. Biyikli, K. Zhu, F. Yun, H. Morkoç, Ashutosh Sagar, and R. M. Feenstra, Morphology of GaN seed layers on in-situ deposited porous SiN and its effect on properties of overgrown GaN epilayers, submitted to J. Crystal Growth.
  89. V. Popa, O. Volciuc, Im. M. Tiginyanu, V. V. Ursaki, and H. Morkoç, Methane selective GaN based gas sensor in ethanol environment, Physics Status Solidi, to appear.
  90. Y. T. Moon, C. Liu, J. Xie, X. Ni, Y. Fu, N. Biyikli, H. Morkoç, L. Zhou, and D. J. Smith, In situ pendeo epitaxy of GaN using heteroepitaxial AlGaN/GaN cracks, to be submitted.