William C. Mitchel
Senior Scientist, Air Force Research Laboratory, AFRL/MLPO, W-PAFB, OH 45433-7707, (937) 255-4474, ext. 3252, FAX (937) 255 4913, email: william.mitchel@wpafb.af.mil
Research Areas:
Electronic properties of semiconductor materials and heterostructures, electrically active defects in semiconductors
Eduction:
B.S., Physics, John Carroll University (1971)
M.S., Physics, University of Cincinnati (1973)
Ph.D., Physics, University of Cincinnati (1978)
Professional Affiliations:
Fellow of the American Physical Society
Member, Institute of Electrical and Electronic Engineers
Member, Materials Research Society
Member, The Minerals, Metals and Materials Society
Selected Publications:
"Characterization of an AlGaN/GaN two-dimensional electron gas structure," A. W. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, L. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck, J. Appl. Phys. 87, 369 (2000)
"Fermi level control and deep levels in semi-insulating 4H-SiC," W. C. Mitchel, R. Perrin, J. Goldstein, A. Saxler, M. Roth, S. R. Smith, J. S. Solomon, and A. O. Evwaraye, J. Appl. Phys. 86, 5040 (1999).
"Boron acceptor levels in 6H-SiC bulk samples," A. O. Evwaraye, S. R. Smith, W. C. Mitchel, and H. McD. Hobgood, Appl. Phys. Lett. 71, 1186 (1997).
"Two dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates," J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, and W. C. Mitchel, Appl. Phys. Lett. 69, 963 (1996).
"Semi-insulating 6H-SiC grown by physical vapor transport," H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 68, 1364 (1995).