David C. Look

Senior Research Physicist, and Director, Semiconductor Research Center, Wright State University, 3640 Col. Glenn Hwy., Dayton, OH 45435, 937-255-1725, FAX 937-255-3374, e-mail: david.look@wpafb.af.mil

Research areas:

Electrical, optical, and magnetic resonance studies of compound semiconductors, including GaN, ZnO, SiC, GaAs, InP, CdS, CdSe, and CdTe.

Education:

B. Phys., Physics, University of Minnesota (1960)
M.S., Physics, University of Minnesota (1962)
Ph.D., Physics, University of Pittsburgh (1966)
M.S., Management Science, University of Dayton (1978)

Professional Affiliations:

Fellow of the American Physical Society
Member of the American Scientific Affiliation
Member of the Materials Research Society

Selected Professional Activities:

Chairman, First International Workshop on ZnO, 1999
Member, Organizing Committee, Semiconducting and Insulating Materials Conference, 1984-present
Member, Organizing Committee, EXMATEC, 1996-present
Chairman, WOCSEMMAD, 1990

Professional Experience:

Research Physicist, U.S. Air Force, Dayton, OH (1966-1969)
Senior Research Physicist, University of Dayton, Dayton, OH (1969-1980)

Research Grants:

Materials for High Speed Devices (PI), Air Force Research Laboratory (5/1/00-4/30/05)
Identification and Elimination of Defects and Impurities in GaN (PI), AFOSR (8/15/00-8/14/02)

Selected Publications:

M.E. Levinshtein, S.L. Rumyantsev, D.C. Look, R.J. Molnar, M. Asif Khan, G. Simin, V. Advarahan, and M.S. Shur, Low Frequency Noise in n-GaN with High Electron Mobility, J. Appl. Phys. 86, 5075 (1999).

Z-Q. Fang, D.C. Look, C. Lu, and H Morkoç, Electron and Hole Traps in GaN p-i-n Photodetectors Grown by Reactive Molecular Beam Epitaxy, J. Electronic Mater. 29, L19 (2000).

L. Polenta, Z-Q. Fang, and D.C. Look, On the Main Irradiation-Induced Defect in GaN, Appl. Phys. Lett. 76, 2086 (2000).

D.C. Look and J.R. Sizelove, Dislocation Scattering In GaN, Phys. Rev. Lett. 82, 2552 (1999).

D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Defect Donor and Acceptor in GaN, Phys. Rev. Lett. 79, 2273, (1997).