Tung-Sheng Kuan,

Professor, Department of Physics, State University of New York at Albany, Albany, NY 12222
Office: (518) 442-4489, Fax: (518) 442-4607, e-mail: kuan@csc.albany.edu

Defect mechanisms in epitaxial growth of heterostructures; Mechanical and electrical properties of nanostructures; Sub-0.1 m m on-chip interconnection technology

Ph.D., Materials Science, Cornell University, Ithaca, NY (1977)
M.S., Materials Science, Cornell University, Ithaca, NY (1973)
B.S., Physics, National Taiwan University, Taipei, Taiwan (1970)

Professional Affiliations:

Fellow of the American Physical Society
Member, Materials Research Society, Microscopy Society of America, The Minerals, Metals and Materials Society

Selected Professional Activities:

Task group leader, Metrology and Reliability Testing/Evaluation, SRC Center for Advanced Interconnect Science and Technology, 1996-present
Member, SUNY-Albany Doctoral Program Review Panel, 1997
Guest editor, IBM Journal of Research and Technology Vol. 39, No.4, On-Chip Interconnection Technology, July 1995
Co-organizer, Symposium on low dielectric constant materials: Synthesis and applications in microelectronics, MRS 1995 Spring Meeting

Professor, Department of Physics, State University of New York at Albany (1995 to present)
Manager, Interconnect Materials and Modeling, IBM T. J. Watson Research Center (1991-1995)
Manager, Materials Structure and Properties, IBM T. J. Watson Research Center (1986-1991)
Research Staff Member, IBM T. J. Watson Research Center (1977-1985)

Performance Limits of Nanoscale Metal Lines (PI), SRC Center for Advanced Interconnect Science and Technology, (9/1/96-4/30/01)
Large Area Heteroepitaxial Growth Using Compliant Substrates (co-PI), ONR (7/1/96-6/30/01)
Increased Functionality of Si through Integration of SiGe Films with III-V Semiconductors for Wireless Transmitters (co-PI), DARPA (9/1/00-8/30/03)

Z. Yang, J. Alperin, W. I. Wang, S. S. Iyer, T. S. Kuan, and F. Semendy, In situ relaxed Si_1-xGe_x epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates, J. Vac. Sci. Technology. B 16(3), 1489 (1998).

Y. Hsu, T.E.F. M. Standaert, G. S. Oehrlein, T. S. Kuan, E. Sayre, K. Rose, K.Y. Lee, and S. M. Rossnagel, Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching, J. Vac. Sci. Technol. B 16(6), 3344 (1998).

T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, and T. F. Kuech, Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy, Mat. Res. Soc. Symp. Proc. Vol. 595, W2.6.1 (2000).

T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y. –P. Zhao, G. –C. Wang, S. M. Rossnagel, and C. Cabral, Fabrication and Performance Limits of Sub-0.1 m m Cu Interconnects, Mat. Res. Soc. Symp. Proc. Vol. 612, D7.1.1 (2000).

S. S. Yi, D. M. Hansen, C. K. Inoki, D. L. Harris, T. S. Kuan, and T. F. Kuech, Lateral Epitaxial Overgrowth of GaSb on GaSb and GaAs Substrates by Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett. 77, 842 (2000).