Daniel D. Koleske

Research Staff Member, Chemical Processing Science Department, Code 0601, Sandia National Laboratories, Albuquerque, NM; phone: 505-284-4531; FAX: 505-844-3211; ddkoles@sandia.gov

Research Areas:

Metalorganic vapor phase epitaxial growth of group III – nitrides.

Education:

B.S. Chemistry, University of Wisconsin, Madison (1984).
Ph.D., Physical Chemistry, The University of Chicago (1992).

Professional Affiliations:

Member, Materials Research Society

Professional Experience:

Research Chemist at the University of Chicago (1984-1992)
Post-Doctorial Researcher at IBM, Yorktown Heights (1992-1993)
NRC Post-Doctorial Researcher at the Naval Research Laboratory (1993-1995)
Staff Researcher at the Naval Research Laboratory (1995-2000)
Staff Researcher at Sandia National Laboratories (2000 - present)

Awards:

National Research Council (NRC)/ Naval Research Laboratory (NRL) Cooperative Research Associateship Award, 1993.

Research Grants:

PI on 6.2 program "Growth Techniques for Reducing Trap Densities in Device Quality GaN" – NRL internal funding.

Selected Publications:

  1. D.D. Koleske, M.E. Twigg, A.E. Wickenden, R.L. Henry, R.J. Gorman, J.A. Freitas, Jr., M. Fatemi, "Electrical and Structural Properties of Si Doped GaN Films Grown Using Multiple AlN Interlayers", Appl. Phys. Lett. 75, 3141 (1999).
  2. 2. D.D. Koleske, Wickenden, A.E., Henry, R.L., Twigg, M.E., J.C. Culbertson, and Gorman, R.J, "Enhanced GaN decomposition in H2 near atmospheric pressures", Appl. Phys. Lett. 73, 2018 (1998).
  3. D.D. Koleske, A.E. Wickenden, R.L. Henry, W.J. DeSisto and R.J. Gorman, "A growth model for GaN with Comparison to Structural, Optical and Electrical Properties", J. Appl. Phys., 84, 1998 (1998).
    4.
  4. D.D. Koleske, S.M. Gates, and B. Jackson, "Atomic H on Si Surfaces: Evidence for the Eley-Rideal Abstraction Mechanism", J. Chem. Phys. 101, 3301 (1994).
    5.
  5. D.D. Koleske, S.M. Gates, B.D. Thoms, J.N. Russell, Jr. and J.E. Butler, "Hydrogen on Diamond Films: Studies of Isothermal Desorption and Atomic Deuterium Abstraction", J. Chem. Phys. 102, 992 (1995).