Randall M. Feenstra,

Professor, Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, (412) 268-6961, FAX (412) 681-0648, email: feenstra@andrew.cmu.edu

Research Areas:

Atomic structure and electronic spectroscopy of semiconductor materials and heterostructures, growth of semiconductor thin films by molecular beam epitaxy, scanning probe microscopy

B.Ap.Sc., Engineering Physics, University of British Columbia (1978),
M.S., Applied Physics, California Institute of Technology (1980),
Ph.D., Applied Physics, California Institute of Technology (1982).

Fellow of the American Physical Society.
Fellow of the American Vacuum Society.
Member, Materials Research Society.

Co-organizer, Symposium on GaN and Related Alloys, MRS Fall Meeting, 1999.
Member, Organizing Committee, Electronic Materials Conference, 1995-present.
Member, Organizing Committee, Conference on the Physics and Chemistry of Semiconductor Interfaces, 1994-1999, and Conference Chair, 1998.

Research Staff Member, IBM Research, Yorktown Heights, NY (1982-1995).

Alexander von Humboldt Foundation Research Award, 2000.
Peter Mark Memorial Award of the American Vacuum Society, 1989.
IBM Outstanding Innovation Award, 1987

Nanoscale Structure of Semiconductor Surfaces, Alloys, and Heterostructures (PI), NSF (2/1/00-1/31/03).
Growth and Characterization of AlGaN Films (PI), ONR (12/1/95-9/30/02).
Nanoporous Templates for Large Defect Reduction in SiC and GaN, Nanocatalysis, Magnetic Clusters, and Biotechnology, DURINT ONR (5/1/01-4/30/04).

V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, and D. W. Greve , Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy, J. Vac. Sci. Technol. A 18, 1915 (2000).

H. Chen, R. M. Feenstra, J. E. Northrup, T. Zywietz,and J. Neugebauer, Spontaneous Formation of Indium-rich Nanostructures on InGaN(0001) Surfaces, Phys. Rev. Lett. 85, 1902 (2000).

V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Inversion of wurtzite GaN(0001) by exposure to magnesium, Appl. Phys. Lett. 75, 808 (1999).

A. R. Smith and R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, J. E. Northrup, Determination of Wurtzite GaN Lattice Polarity Based on Surface Reconstruction, Appl. Phys. Lett. 72, 2114 (1998).

A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Reconstructions of the GaN(0 0 0 -1) Surface, Phys. Rev. Lett. 79, 3934 (1997).