President, Technologies and Devices International, Inc., 8660 Dakota Dr., Gaithersburg, MD 20877, Tel. (301) 208 8342, FAX (301) 330 5400, e-mail vladimir@tdii.com

Technology (epitaxial and bulk growth) and characterization of wide band gap semiconductor materials (SiC, GaN, AlN) and devices

M.S., Electrical Engineering, Leningrad Electrotechnical Institute (1978)
Ph.D., Semiconductor Physics, Ioffe Institute (1986)
Doctor of Science, Semiconductor Physics, Ioffe Institute (1996)

Member, Material Research Society

Chair, NSF/ONR High Temperature Electronic Panel (1997-2000)
ICNS, International Advisory Committee (1999, 2000)
Russian Workshop on Group III Nitrides, co-chair 1997, 1999, 2000, chair 1998.
Chair, U.S. – Japan (1998) and U.S. – Europe (1999) Conferences on Wide Bandgap Semiconductor Technology for Next Generation Electronic and Photonic Devices

Professional Experience:

Research Stuff Member (1978 - present), Ioffe Institute
Senior Scientist (1992-1996), Cree Research, Inc.
General Director (1993-1996), Cree EED
Visiting Scientist (1991-1992, 1996-1999), MSRCE, Howard University

Research Grants:

PI on 17 DoD contracts

M. Mynbaeva, N. Savkina, A. Tregubova, M. Scheglov, A. Lebedev, A. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N. Seredova, D. Tsvetkov, S. Stepanov, A. Cherenkov, I. Kotousova, V. Dmitriev, "Growth of SiC and GaN on porous buffer layers", Materials Science Forum Vols. 338-342 (2000) 225.

M. Mynbaeva, N. Savkina, D. Davidov, A. Zubrilov, N. Seredova, A. Strel’chuk, A. Tregubova, A. Lebedev, I. Kotousova, and V. Dmitriev, "Porous SiC substrate materials for high-quality epitaxy", Mat. Res. Soc. Symp. Vol. 587 (2000) W2.7.1

M. Mynbaeva, A. Titkov, A. Kryzhanovski, A. Zubrilov, V. Ratnikov, V. Davydov, N. Kuznetsov, K. Mynbaev, S. Stepanov, A. Cherenkov, I. Kotousova, D. Tsvetkov, V. Dmitriev, "GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates" Mat. Res. Soc. Symp. Vol. 595 (2000) O8.6.1

M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov and K. Mynbaev, R. Laiho and H. Huhtinen, V. Dmitriev, "Structural characterization and strain relaxation in porous GaN layers", Appl. Phys. Let. 76 (2000) 1113.

V. Dmitriev and M. Spencer, SiC Fabrication Technology: Growth and Doping, in: Semiconductors and Semimetals, Vol. 52, ed. Yoon Soo Park (Academic Press 1998), pp. 21-75.