Optical and electrical properties of silicon carbide and the III-Nitrides: experimental investigation of band structure and phonon properties, impurities and defects

B.S.E., Electrical Engineering (Engineering Physics Program), Princeton University (1975)
M.S., Physics, Cornell University (1979)
Ph.D., Physics, Cornell University (1983)

Professional Affiliations:

Member, American Physical Society

Member, Program Committee, International Conference on Silicon Carbide and Related Materials - 2001
Co-Editor of Proceedings and Member of Program Committee, International Conference on Silicon Carbide and Related Materials - 1999

Professional Experience

Assistant Professor, Dept. of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA (1984-1990)
NRC Associate, Naval Research Laboratory, Washington, DC (1983-1984)

"Spectroscopic Studies of SiC for High Power Device Materials" 12/01/97-01/24/01 NASA
"Diagnostic and Data Base Acquisition for Large Bandgap Device Materials" 10/01/00 - 09/30/03 ONR

M.F. MacMillan, R.P. Devaty, W.J. Choyke, D.R. Goldstein, J.E. Spanier and A.D. Kurtz, Infrared reflectance of thick p-type porous SiC layers, J. Appl. Phys. 80, 2412 (1996).

R. P. Devaty and W. J. Choyke, Optical characterization of SiC polytypes, Phys. Stat. Sol. A 162, 5 (1997).

R.P. Devaty, W.J. Choyke, S.G. Sridhara and L.L. Clemen, Neutral aluminum and gallium four particle complexes in silicon carbide polytypes, Mat. Sci. Eng. B 61-62, 187 (1999).

S.G. Sridhara, S. Bai, O. Shigiltchoff, R.P. Devaty and W.J. Choyke, Differential absorption measurement of valence band splittings in 4H SiC, Mat. Sci. Forum 338-342, 567 (2000).

G. Rutsch, R.P. Devaty, W.J. Choyke, D.W. Langer, L.B. Rowland, E. Niemann and F. Wischmeyer, Hall scattering factor and electron mobility of 4H SiC: Measurements and numerical simulation, Mat. Sci. Forum 338-342, 733 (2000).