6H PSC sample received from Steve Saddow (no specifications available)
note: definitely 6H (from TEM) and miscut (from AFM) wafer

piece map and growth specification.

GaN MBE growth performed at CMU on 50/50 piece, yielding sample 051001.

GaN MBE growth performed at CMU on PS piece, yielding sample 051801.

GaN MBE growth performed at CMU on NP piece, yielding sample 052301.

TEM - performed at SUNY Albany (July/01) for piece of untreated PSC,
TEM slide 1 (note: clearly shows skin layer).

thickness of porous layer from TEM:
1.3 microns (sample 051001)
1.2 microns (TEM of untreated PSC)