MBE growth of GaN layer on 100% 4H PSC sample, T_Ga=1095 C, T_sub=800 C, 2 micron thickness.

Brief H-etch performed in effort to remove some of the "skin" layer; subsequent preparation consisted of regular Si cleaning step

XRD performed at CMU (Nov./00): triple xtal, FWHM (arcsec)
(0002) (omega) 252
(0002) (omega-2theta) 23
(1 0 -1 2) (omega) 550
(1 0 -1 2) (omega-2theta) 90

TEM - performed at SUNY Albany (Nov/00):
PS layer thickness from TEM - 1.7 microns
TEM slide 1
TEM slide 2
TEM slide 3
TEM plan view
TEM diffraction