DURINT - Nanoporous SiC and GaN - DATABASE

This database is intended as a summary of all samples (i.e. wafers or pieces of wafers) procured as part of this DURINT project, including the eventual disposition of each sample. Data is listed in chronological order, and filed under the SAMPLE NUMBER, listed with the received date and supplier.

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A few abbreviations used in this database:
PSC - porous SiC
PS or ps - porous (occasionally PO is used for the same purpose)
NP or np - nonporous
STD - standard SiC; synonymous with nonporous SiC
50/50 - refers to wafer which is 50% PS and 50% NP
100% - refers to wafer which is 100% PS
specifying miscut: angle following by direction, e.g. 8 deg towards (1 1 -2 0) (note: miscut towards (1 1 -2 0) is Cree standard, and this is the miscut direction on all samples unless a special direction is used)

Distinguishing 6H and 4H: 6H is greenish colored, 4H is brownish colored.

All wafers below are (0001) oriented (i.e. c-plane), Si-face, unless otherwise specified. Wafers with (1 -1 0 0) surface are "m-plane", and wafers with (1 1 -2 0) surface are "a-plane".

All wafers are n-type unless otherwise specified, with resistivity (rho) given in ohm-cm.

Orientation of Si-face can be easily made in most cases since it's the only one that's polished. For double-sided polish other methods can be used: (1) for Cree wafers, they're laser scribed with the wafer number on the back (C-face) of the wafer. (2) for Intrinsic wafers, they have flats on the side of the wafers and when viewing the Si-face the secondary (smaller) flat it rotated 90 degrees CW relative to the primary (larger) flat.

Misc. wafers and results (some from before the start of the DURINT)

AB0425-05 Part 1 4H PSC 50/50 8 deg towards (1 1 -2 0) (rec'd from TDI at CMU Sept. 28, 2000)

M-866 6H 50/50 PSC 3.5 deg towards (1 1 -2 0) (rec'd at CMU from Saddow, May, 2001)

SiC on Si samples (rec'd at CMU from Morkoc, June, 2001)

M-1021 6H 50/50 PSC (rec'd at CMU from Saddow, July, 2001)

D1286-29 (NP SiC, rec'd at CMU from Morkoc for H-etching, July, 2001)

First batch of PSC from TDI Inc. (rec'd at CMU, July 5, 2001)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form
sample specification sheet 1
sample specification sheet 2

M-818 6H 100% PSC on-axis rho=0.167 (sparse porous network with large pores)
M-916 6H 100% PSC on-axis rho=0.148 (sparse porous network with large pores and smaller features as seen in TEM and SEM)
M-919 6H 100% PSC on-axis rho=0.138 (sparse porous network with large pores and smaller features as seen in SEM)
M-920 6H 100% PSC on-axis rho=0.136; diced
M-921 6H 100% PSC on-axis rho=0.136; diced
M-923 6H 50/50 PSC on-axis rho=0.13 (sparse porous network with large pores and smaller features as seen in SEM)
M-924 6H 50/50 PSC on-axis rho=0.049 (regular, dense porous network at seen in SEM)

M-1024 6H 50/50 PSC 3.5 deg towards (1 1 -2 0) rho=0.034 (regular, dense porous network at seen in SEM)
M-1025 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.032 (regular, dense porous network at seen in TEM)
M-1048 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.1; diced

M-1026 4H 50/50 PSC 8 deg towards (1 1 -2 0) rho=0.047 (regular, dense porous network at seen in SEM)
M-1028 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.042, to Kumta
M-1029 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.045 (regular, dense porous network at seen in TEM)

non-c-plane wafers from Bill Mitchel (Feb/02)

accompanying letter

 B8019-47, SiC, a-plane or m-plane (not sure which) wafers all cut from same boule, 4 wafers, each 1 cm x 1 cm, all pieces to Choyke.
Laue x-ray by Choyke's group indicate that all are m-plane, i.e. (1-100)

batch of standard (nonporous) production grade SiC (0001) Si-face wafers from Cree (March/02)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form 1
shipping form 2

XV0917-24 6H 3.5 deg towards (1 1 -2 0) rho=0.067, to Choyke
AK0680-15 6H 3.5 deg towards (1 1 -2 0) rho=0.068, to Choyke
AK0680-23 6H 3.5 deg towards (1 1 -2 0) rho=0.063, to Choyke
AK0680-13 6H 3.5 deg towards (1 1 -2 0) rho=0.066, to Kumta
AM0759-05 6H 3.5 deg towards (1 1 -2 0) rho=0.072, cut up
AM0759-01 6H 3.5 deg towards (1 1 -2 0) rho=0.074, to Wolan (lost at Fedex; recovered), sent to Wolan again
XY0847-06 6H 3.5 deg towards (1 1 -2 0) rho=0.069, to Saddow.

Note: the wafers below are, as indicated, 4H 3.5 degree miscut. This is an unusual miscut for 4H material (usually it is 8 degrees), but this miscut was mistakenly used by the manufacturer. (We will obtain some additional 4H 8 degree wafers to make up for this error).

BW0315-04 4H 3.5 deg towards (1 1 -2 0) rho=0.035, to Choyke
BW0315-08 4H 3.5 deg towards (1 1 -2 0) rho=0.036, to Choyke; returned to CMU
BW0315-09 4H 3.5 deg towards (1 1 -2 0) rho=0.037, to Kumta
BW0315-10 4H 3.5 deg towards (1 1 -2 0) rho=0.037, to Morkoc
BW0315-15 4H 3.5 deg towards (1 1 -2 0) rho=0.038, to Morkoc

First batch of standard (nonporous) 4H SiC (1 1 -2 0) surface (a-plane) wafers from Cree (March/02)

wafers are all n-type, 12 mm x 12 mm approx

shipping form

CV0211B-15, to Choyke
CV0211B-24, to Choyke
CV0211B-28, to Choyke
CV0211B-30, to Choyke
CV0211B-41, to Choyke; returned to CMU (control sample)
CV0211B-49, to Wolan (lost at Fedex; recovered); made porous
CV0211B-51, to Wolan (lost at Fedex; recovered); made porous
CV0211B-56, to Wolan
CV0211B-57, to Wolan
CV0211B-99, to Ashutosh - problems with H-etching (control sample)

Second batch of PSC from TDI, Inc. (rec'd at CMU, March 22 and 27, 2002)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form 1
shipping form 2

M-1579 6H 100% PSC on-axis rho=0.054, to Wolan (lost at Fedex; recovered), to Feng Yun
M-1581 6H 100% PSC on-axis rho=0.051, to Wolan (lost at Fedex; recovered), to Feng Yun
M-1578 6H 50/50 PSC on-axis rho=0.05, to Wolan
M-1582 6H 50/50 PSC on-axis rho=0.051, to Wolan

M-1051 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.104, to Kumta
M-1062 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.25, cut up
M-1584 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.067, to Wolan (lost at Fedex; recovered); to Ashutosh
M-1585 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.067, to Wolan
M-1050 6H 50/50 PSC 3.5 deg towards (1 1 -2 0) rho=0.102, to Saddow
M-1052 6H 50/50 PSC 3.5 deg towards (1 1 -2 0) rho=0.104, to Saddow
M-1058 6H 50/50 PSC 3.5 deg towards (1 1 -2 0) rho=0.101, to Feng Yun

M-1586 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.018, to Kumta
M-1587 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.019, cut up

SiC wafers received from TDI Inc. as distribution of deliverables following completion of BMDO Contract (rec'd at CMU, May 20, 2002)

cover letter
materials list
May 30, 2002; CV0010-10 and CV0012-10 to Saddow.
June, 2002; BD0550-18, BD0550-20, BJ0361-09, ACH1#4,#9,#12 to Morkoc group.
Aug, 2002; BM0242-18, ACH1#8,#10 to Saddow, ACH1#13 to Feenstra.

Third batch of PSC from TDI, Inc. (rec'd at CMU, Aug 20, 2002)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form

M-1597 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.020, to Wolan
M-1599 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.018, to Feng Yun
M-1601 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.018, to Feng Yun
M-1596 4H 50/50 PSC 8 deg towards (1 1 -2 0) rho=0.019, to Kumta
M-1598 4H 50/50 PSC 8 deg towards (1 1 -2 0) rho=0.020, to Kumta

Two 4H SiC wafers from Cree (to make up for earlier batch in which the miscut was nonstandard) (rec'd at CMU, Nov, 2002)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form

CT0444-13 4H 8 deg towards (1 1 -2 0) rho=0.037, to Morkoc
CT0444-17 4H 8 deg towards (1 1 -2 0) rho=0.033, to Saddow

Second batch of standard (nonporous) 4H SiC (1 1 -2 0) surface (a-plane) wafers from Cree (Feb/03)

wafers are all n-type, 12 mm x 12 mm approx

shipping form

BX0238-15, to Feng Yun
BX0238-18, to Feng Yun
BX0238-40, to Feng Yun
BX0238-43, to Ashutosh
BX0238-47, to Ashutosh
BX0238-74, to Ashutosh
BX0238-83, to Ashutosh
CV1211-28, to Shu Nie
CV1211-30, to Shu Nie
CV1211-33, to Saddow for epi
BX0238-14, to Choyke
BX0238-73, to Choyke
CV0211-85, to Choyke
CV0211-86, to Choyke
CV0211-88, to Choyke
CV0211-89, to Choyke
CV0211-90, to Choyke
CV0211-97, to Choyke
CV0211-98, to Choyke
CV0211-99, to Choyke

batch of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree (April/03)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm. The shipping forms below list 24 wafers, 8 6H on-axis, 8 6H off-axis, and 8 4H off-axis. Of these, 5 of the 6H on-axis, 5 of the 6H off-axis, and 2 of the 4H off-axis wafers have been sent out to TDI be made porous, as indicated.

shipping form 1
shipping form 2
shipping form 3

AP0498-30 6H on-axis rho=0.099, sent to TDI
AP0498-32 6H on-axis rho=0.098, sent to TDI
AP0498-33 6H on-axis rho=0.097, sent to TDI
BB1278-03 6H on-axis rho=0.078, sent to TDI
BB1278-07 6H on-axis rho=0.078, sent to TDI, to Ashutosh (cut up)
BK0703-04 6H on-axis rho=0.087, to Feng Yun
BR0689-04 6H on-axis rho=0.095, to Ashutosh (cut up)
BY0378-45 6H on-axis rho=0.075, to Ashutosh (cut up)

AK0680-01 6H 3.5 deg towards (1 1 -2 0) rho=0.070, sent to TDI
AK0680-08 6H 3.5 deg towards (1 1 -2 0) rho=0.067, sent to TDI
AM0759-24 6H 3.5 deg towards (1 1 -2 0) rho=0.055, sent to TDI
BR0600-06 6H 3.5 deg towards (1 1 -2 0) rho=0.052, sent to TDI
BR0600-17 6H 3.5 deg towards (1 1 -2 0) rho=0.045, sent to TDI
XX0897-15 6H 3.5 deg towards (1 1 -2 0) rho=0.057, to Feng Yun
XX0897-16 6H 3.5 deg towards (1 1 -2 0) rho=0.056, to Ashutosh (cut up)
XX0847-11 6H 3.5 deg towards (1 1 -2 0) rho=0.066, to Ashutosh

BN-0637-12 4H 8 deg towards (1 1 -2 0) rho=0.020, sent to TDI
BN-0637-13 4H 8 deg towards (1 1 -2 0) rho=0.019, sent to TDI
BQ-0677-02 4H 8 deg towards (1 1 -2 0) rho=0.021, sent to Saddow
BQ-0677-03 4H 8 deg towards (1 1 -2 0) rho=0.021, sent to Saddow
BQ-0677-04 4H 8 deg towards (1 1 -2 0) rho=0.020, sent to Saddow
BQ-0677-05 4H 8 deg towards (1 1 -2 0) rho=0.020, sent to Saddow
BQ-0677-06 4H 8 deg towards (1 1 -2 0) rho=0.020, to Feng Yun
BQ-0677-08 4H 8 deg towards (1 1 -2 0) rho=0.019, to Choyke

Fourth batch of PSC from TDI, Inc. (rec'd at CMU, April 28, 2003)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form (there's a couple of small typos on this shipping form, but they have been corrected in the list below).

BB1278-03 6H 100% PSC on-axis rho=0.078, to Wolan
AP0498-30 6H 100% PSC on-axis rho=0.099, to Yun (Morkoc)
AP0498-32 6H 100% PSC on-axis rho=0.098, to Kumta
BB1278-07 6H 100% PSC on-axis rho=0.078, cut up
AP0498-33 6H 100% PSC on-axis rho=0.097, to Feng Yun

AM0759-24 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.055, to Wolan
BR0600-06 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.052, to Yun (Morkoc)
BR0600-17 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.045, to Kumta
AK0680-08 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.067, diced and sent to Wolan
AK0680-01 6H 100% PSC 3.5 deg towards (1 1 -2 0) rho=0.070, diced

BN0637-12 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.020, to Wolan
BN0637-13 4H 100% PSC 8 deg towards (1 1 -2 0) rho=0.019, half to Kumta and half to Yun (Morkoc)

Batch of GaN-on-sapphire wafers from TDI, Inc. (rec'd at CMU, Aug 27, 2003)

wafers are all 2 inch diameter, with thicknesses of GaN in the range 2 - 5 microns.

shipping form

AP34-2, to Ashutosh
AP412-1, to Yang
AP352-1, to Yang Dong
LS25-2, to Ashutosh
AP87-1, to Ashutosh

batch of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree (Nov/03)

wafers are n-type or p-type (indicated by N or P following polytype), 2 inch diameter, with resistivity (rho) shown in ohm-cm. n-type wafers are Si-face polish and p-type wafers are C-face polish. The shipping forms below list 24 n-type wafers: 8 6HN on-axis, 8 6HN off-axis, and 8 4HN off-axis; along with 14 p-type wafers: 6 6HP off-axis and and 8 4HP off-axis.

shipping form 1
shipping form 2
shipping form 3
shipping form 4
shipping form 5
shipping form 6
shipping form 7
shipping form 8

FA0205-11 6HN on-axis rho=0.085, to TDI
FA0205-12 6HN on-axis rho=0.084, to TDI
FA0205-16 6HN on-axis rho=0.083, to TDI
FA0205-20 6HN on-axis rho=0.084, to TDI
FA0205-21 6HN on-axis rho=0.082, to TDI
FA0205-22 6HN on-axis rho=0.083, to TDI
FA0205-25 6HN on-axis rho=0.083, to Feenstra
FA0205-27 6HN on-axis rho=0.085, to Kumta

AJ0529-02 6HN 3.5 deg towards (1 1 -2 0) rho=0.042, to TDI
BN0701-26 6HN 3.5 deg towards (1 1 -2 0) rho=0.045, to TDI
BR0600-28 6HN 3.5 deg towards (1 1 -2 0) rho=0.054, to Kumta
XF0980-03 6HN 3.5 deg towards (1 1 -2 0) rho=0.052, to Yun
XR0902-23 6HN 3.5 deg towards (1 1 -2 0) rho=0.150, to Yun
XR0902-27 6HN 3.5 deg towards (1 1 -2 0) rho=0.065, to Yun
XY0847-12 6HN 3.5 deg towards (1 1 -2 0) rho=0.066, to Yun
XY0847-23 6HN 3.5 deg towards (1 1 -2 0) rho=0.059, to Wolan

AT0813-11 4HN 8 deg towards (1 1 -2 0) rho=0.018, to Saddow
BN0584-12 4HN 8 deg towards (1 1 -2 0) rho=0.017, to Saddow
BN0619-11 4HN 8 deg towards (1 1 -2 0) rho=0.017, to Choyke
BN0619-12 4HN 8 deg towards (1 1 -2 0) rho=0.016, to Choyke
BQ0657-11 4HN 8 deg towards (1 1 -2 0) rho=0.017, to Choyke
CB0568-10 4HN 8 deg towards (1 1 -2 0) rho=0.018, to Saddow
CB0572-12 4HN 8 deg towards (1 1 -2 0) rho=0.017, to Choyke
FE0074-12 4HN 8 deg towards (1 1 -2 0) rho=0.017, to Wolan

BQ0417-05 6HP 3.5 deg towards (1 1 -2 0) rho=3.098, to Choyke
BQ0417-13 6HP 3.5 deg towards (1 1 -2 0) rho=2.306, to Choyke
BQ0417-14 6HP 3.5 deg towards (1 1 -2 0) rho=2.231, to Choyke
BQ0424-02 6HP 3.5 deg towards (1 1 -2 0) rho=1.714, to Choyke
BQ0418-13 6HP 3.5 deg towards (1 1 -2 0) rho=0.955, to Choyke
BQ0418-15 6HP 3.5 deg towards (1 1 -2 0) rho=0.787, to Choyke

CB0664-13 4HP 8 deg towards (1 1 -2 0) rho=5.764, to Choyke
CB0664-14 4HP 8 deg towards (1 1 -2 0) rho=5.037, to Choyke
CB0665-03 4HP 8 deg towards (1 1 -2 0) rho=5.575, to Choyke
CB0665-04 4HP 8 deg towards (1 1 -2 0) rho=5.456, to Choyke
CB0665-08 4HP 8 deg towards (1 1 -2 0) rho=5.422, to Choyke
BQ0296-06 4HP 8 deg towards (1 1 -2 0) rho=0.190, to Choyke
BQ0533-04 4HP 8 deg towards (1 1 -2 0) rho=1.214, to Choyke
BQ0296-01 4HP 8 deg towards (1 1 -2 0) rho=3.500, to Choyke

batch of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree (Jan/04)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm, except for one semi-insulating (SI) 3 inch wafer. All wafers are Si-face polish. The shipping forms below list 31 wafers: 10 6HN on-axis, 10 6HN off-axis, 10 4HN off-axis, and 1 4H semi-insulating on-axis.

shipping form 1
shipping form 2
shipping form 3
shipping form 4

AP0498-36 6H on-axis rho=0.093, to Wolan
BG0754-08 6H on-axis rho=0.090, to NOVASIC for polishing, then to TDI for anodization
BG0754-11 6H on-axis rho=0.082, to NOVASIC for polishing
BG0754-12 6H on-axis rho=0.079, to NOVASIC for polishing, then to TDI for anodization
BJ0757-33 6H on-axis rho=0.111, to Morkoc
BJ0758-06 6H on-axis rho=0.125, to Morkoc
BK0703-46 6H on-axis rho=0.093, to Morkoc
DH0237-22 6H on-axis rho=0.084, to TDI for anodization together with two NOVASIC-polished wafers above
DM0141-39 6H on-axis rho=0.114, to Morkoc
DM0151-19 6H on-axis rho=0.104, to Morkoc

FS0162-25 6H 3.5 deg towards (1 1 -2 0) rho=0.075, to Morkoc
XF0980-06 6H 3.5 deg towards (1 1 -2 0) rho=0.050, to Morkoc
XF0980-13 6H 3.5 deg towards (1 1 -2 0) rho=0.045, to Morkoc
XF0980-15 6H 3.5 deg towards (1 1 -2 0) rho=0.045, to Morkoc
XN1174-01 6H 3.5 deg towards (1 1 -2 0) rho=0.071, to Morkoc
XN1174-08 6H 3.5 deg towards (1 1 -2 0) rho=0.066, to Morkoc
XN1174-20 6H 3.5 deg towards (1 1 -2 0) rho=0.068, to Kumta
XN1174-21 6H 3.5 deg towards (1 1 -2 0) rho=0.069, to Wolan
XN1174-26 6H 3.5 deg towards (1 1 -2 0) rho=0.057, to Shu
XN1174-30 6H 3.5 deg towards (1 1 -2 0) rho=0.057, to Saddow

BP0519-02 4H 8 deg towards (1 1 -2 0) rho=0.020, to Kumta
BZ0406-10 4H 8 deg towards (1 1 -2 0) rho=0.015, to Saddow
CB0579-13 4H 8 deg towards (1 1 -2 0) rho=0.015, to Saddow
CB0620-03 4H 8 deg towards (1 1 -2 0) rho=0.020, to Saddow
CB0620-08 4H 8 deg towards (1 1 -2 0) rho=0.019, to Saddow
CB0620-09 4H 8 deg towards (1 1 -2 0) rho=0.018, to Saddow
CQ0446-12 4H 8 deg towards (1 1 -2 0) rho=0.015, to Sandeep
FQ0086-01 4H 8 deg towards (1 1 -2 0) rho=0.021, to Saddow
FQ0086-08 4H 8 deg towards (1 1 -2 0) rho=0.019, to Saddow
FQ0100-14 4H 8 deg towards (1 1 -2 0) rho=0.015, to Saddow

DR0228-22 4H SI on-axis rho > 1.e5

Fifth batch of PSC from TDI, Inc. (rec'd at CMU, Feb 4, 2004)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form

FA0205-20 6HN on-axis rho=0.084, to Porotech for analysis
FA0205-21 6HN on-axis rho=0.082, to Ashutosh, for pieces and SEM inspection
FA0205-22 6HN on-axis rho=0.083
FA0205-11 6HN on-axis rho=0.085, to Kumta
FA0205-12 6HN on-axis rho=0.084, to Kumta
FA0205-16 6HN on-axis rho=0.083
BN0701-26 6HN 3.5 deg towards (1 1 -2 0) rho=0.045, to Kumta
AJ0529-02 6HN 3.5 deg towards (1 1 -2 0) rho=0.042, to Wolan

Sixth batch of PSC from TDI, Inc. (rec'd at CMU, March 1, 2004)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm

shipping form

BG0754-12 6HN on-axis rho=0.079, NOVASIC polished
BG0754-08 6HN on-axis rho=0.090, NOVASIC polished, to Sandeep for wafer bonding
DH0237-22 6HN on-axis rho=0.084 (not polished by NOVASIC)

Batch of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree (March/05)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm. All wafers are Si-face polish, except a few are double sided polish as indicated in the shipping form. The shipping forms below list 32 wafers: 10 4HN off-axis, 6 6HN off-axis, 8 6HN on-axis, and 8 4H on-axis.

shipping form 1
shipping form 2
shipping form 3
shipping form 4
shipping form 5
shipping form 6
shipping form 7
shipping form 8
shipping form 9

CD0241-30 4H off-axis rho=0.023, to Choyke
CV0474-01 4H off-axis rho=0.026, to Choyke
CV0474-11 4H off-axis rho=0.024, to Choyke
CV0474-12 4H off-axis rho=0.024, to Choyke
BZ0547-01 4H off-axis rho=0.035, to Choyke
BZ0547-02 4H off-axis rho=0.035, to Choyke
BZ0547-05 4H off-axis rho=0.035, to Choyke
BZ0547-04 4H off-axis rho=0.031, to Saddow
CT0695-09 4H off-axis rho=0.035, to Saddow
XL1006-01 4H off-axis rho=0.020, to Morkoc

CF0615-28 6H off-axis rho=0.053, to Saddow
CS0704-02 6H off-axis rho=0.078, to Saddow
CS0704-03 6H off-axis rho=0.077, to Saddow
CS0704-12 6H off-axis rho=0.078, to Saddow
CS0704-24 6H off-axis rho=0.072, to Morkoc
CS0704-30 6H off-axis rho=0.081, to Morkoc

AX0498-24 6H on-axis rho=0.061, to Choyke
BU0346-27 6H on-axis rho=0.071, to Choyke
XW0618-36 6H on-axis rho=0.059, to Choyke
XW0618-42 6H on-axis rho=0.057, to Choyke
BR0689-42 6H on-axis rho=0.076, to Saddow
BR0689-44 6H on-axis rho=0.072, to Morkoc
BY0378-14 6H on-axis rho=0.070, to Morkoc
CP0278-35 6H on-axis rho=0.072, to Shu Nie

AS1172-28 4H on-axis rho=0.059, to Choyke
CY0743-04 4H on-axis rho=0.060, to Choyke
GE0687-01 4H on-axis rho=0.053, to Choyke
HR0041-26 4H on-axis rho=0.064, to Choyke
AS1172-29 4H on-axis rho=0.058, to Choyke
DP0401-29 4H on-axis rho=0.060, to Choyke
GE0687-14 4H on-axis rho=0.054, to Choyke
HZ0044-19 4H on-axis rho=0.050, to Choyke

Batch of standard (nonporous) A-grade SiC (0001) Si-face wafers from Intrinsic (April/05)

wafers are all n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm. All wafers are Si-face polish, except a few are double sided polish as indicated in the shipping form by "optical" C-face. The shipping form below lists 10 wafers, all 6HN on-axis.

shipping form

410027-10 6H on-axis rho=0.05-0.07, to Wolan
411042-18 6H on-axis rho=0.05-0.07, to Wolan
411042-19 6H on-axis rho=0.05-0.07, to Morkoc
412015-04 6H on-axis rho=0.07-0.1, to Wolan
412015-09 6H on-axis rho=0.1-0.15, to Wolan
412015-10 6H on-axis rho=0.1-0.15, to Wolan
412015-11 6H on-axis rho=0.1-0.15, to Wolan
412015-12 6H on-axis rho=0.1-0.15, to Choyke (4 pieces to Feenstra)
412015-13 6H on-axis rho=0.1-0.15, to Choyke
412015-16 6H on-axis rho=0.05-0.07 (orientation of the flats is reversed on this wafer, but Si-face easily identified since it's the only one polished), to Morkoc

Batch of standard (nonporous) B-grade 6H-SiC (1 0 -1 0) (m-plane) and (1 1 -2 0) (a-plane) wafers from Intrinsic (May/05)

wafers are all n-type, about 15x40 mm, with resistivity less than 0.1 ohm-cm. One side is polished, the other lapped.

shipping form 1
shipping form 2

403068-48 (1B.6N.mS, m-plane)
403068-51 (1B.6N.mS, m-plane)
403068-54 (1B.6N.mS, m-plane)
403086-11 (1B.6N.aS, a-plane)
403086-12 (1B.6N.aS, a-plane)
403086-13 (1B.6N.aS, a-plane)

Batch of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree (April/06)

wafers are all 6H on-axis, n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm. All wafers are Si-face polish.

shipping form

CY0570-48 6H on-axis rho=0.056, to Morkoc
GW0019-24 6H on-axis rho=0.067, to Morkoc
XF0852-12 6H on-axis rho=0.068, to Shu
XF1021-41 6H on-axis rho=0.058
XF1206-11 6H on-axis rho=0.038

Batches of standard (nonporous) research grade SiC (0001) Si-face wafers from Cree and from Intrinsic (May/06)

wafers are all 6H on-axis, n-type, 2 inch diameter, with resistivity (rho) shown in ohm-cm. All wafers are C-face polish.

Cree shipping form 1
Cree shipping form 2
Intrinsic shipping form

BG0754-07 6H on-axis rho=0.099, to Choyke
BK0724-11 6H on-axis rho=0.127, to Choyke
FP0560-21 6H on-axis rho=0.133, to Choyke
AS0895-13 4H on-axis rho=0.139, to Choyke
CK0651-16 4H on-axis rho=0.098, to Choyke
CM0626-34 4H on-axis rho=0.065, to Choyke
512018-06AA 6H on-axis rho=0.1, to Choyke
512018-14AA 6H on-axis rho=0.1, to Choyke