W. J. Choyke

Research Professor of Physics, Department of Physics and Astronomy,University of Pittsburgh, Pittsburgh,PA 15260, (412) 624 9251, FAX (412) 624 1479, email: choyke@imap.pitt.edu

Research Area:

Solid state properties of large bandgap semiconductors, optical properties and electrical characteristics of SiC,AlN and GaN, ion implantation and ion beam diagnostics

Education:

BSc, Engineering Physics, The Ohio State University (1948)
PhD, Nuclear Physics, The Ohio State University (1952)

Professional Affiliations:

Fellow of the American Association for the Advancement of Science
Fellow of the American Physical Society
Member, Materials Research Society, Optical Society of America, American Vacuum Society

Selected Professional Activities:

Member, APS Committee on the Applications of Physics (1977-1986)
Chair, National Research Council Committee on "Materials for High Temperature Semiconductor Devices (1993-1995)
ICSCRM International Steering Committee 1993,1995,1997,1999 and 2001
ICSCRM Technical Program Committee 1993,1997,1999--Co-Chair

Professional Experience:

Research Physicist (1952-1960), Fellow Physicist (1960-1963), Advisory Physicist (1963-1978) and Consultant Physicist (1978-1988) Westinghouse Research Laboratories

Awards

"Westinghouse Order of Merit" 1983
Alexander von Humboldt Foundation "Research Prize" 1990

Research Grants

"Spectroscopic Studies of SiC for High Power Device Materials" 12/01/97-01/24/01 NASA
"Diagnostic and Data Base Acquisition for Large Bandgap Device Materials" 10/01/00 - 09/30/03 ONR

Selected Publications

J.S.Shor, L.Bemis,A.D.Kurtz. I. Grimberg, B.Z.Weiss, M.F. MacMillan and W.J.Choyke, "Characterization of nanocrystallites in porous p-type 6H-SiC", J. Appl. Phys. 76, (1994),4045.

M.F.MacMillan, R.P.Devaty, W.J.Choyke, D.R. Goldstein, J.E.Spanier and A.D.Kurtz, J. Appl. Phys. 80, (1996), 2412

S.G.Sridhara, S.Bai, O. Shigiltchoff, R.P.Devaty and W.J.Choyke, "Absorption Bands Asssociated with Conduction Band and Impurity States in 4H and 6H SiC, Materials Science Forum , Vols.338-342, (2000), 551.

W.J. Choyke and R.P.Devaty, "Fundamental Aspects of SiC", published in "Handbook of Semiconductor Technology-Electronic Structure and Properties of Semiconductors", Vol 1, Eds.K.A.Jackson and W. Schröter, Wiley VCH-Verlag ,Weinheim,Germany, Chapter 11, pp 661-713 (2000).

S.E.Saddow, M.Mynbaeva, W.J.Choyke, R.P.Devaty, Song Bai, G. Melnychuck, Y. Koshka, V.Dmitriev and C.E.C Wood, accepted in the Proceedings of ECSCRMÆ2000, to be published by Trans Tech Publications (2001).