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Nanoporous
SiC and GaN

Background

Announcements of DURINT awards.

Additional Websites relating to Porous SiC and GaN:

Background Publications relating to Porous SiC and GaN:

  1. M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A. S. Zubrilov, V. V. Ratnikov, V. Yu. Davydov, N. I. Kuznetsov, K. Mynbaev, D. V. Tsvetkov, S. Stepanov, A. Cherenkov, and V. Dmitriev, Strain relaxation in GaN layers grown on porous GaN sublayers, MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).

  2. M. Mynbaeva, A. Titkov, A. Kryzhanovski, A. Zubrilov, V. Ratnikov, V. Davydov, N. Kuznetsov, K. Mynbaev, S. Stepanov, A. Cherenkov, I. Kotousova, D. Tsvetkov, V. Dmitriev, GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates, Mat. Res. Soc. Symp. Vol. 595, W2.7.1 (2000).

  3. G. Melnychuk, M. Mynbaeva, S. Rendakova, V. Dmitriev, and S. E. Saddow, SiC epitaxial growth on porous SiC substrates, Mat. Res. Soc. Symp. Vol. 622, T4.2.1 (2000).

  4. M. Mynbaeva, A. Titkov, A. Kryzhanovski, V. Ratnikov, H. Huhtinen, R. Laiho, and V. Dmitriev, Structural characterization and strain relaxation in porous GaN layers, Appl. Phys. Lett. 76, 1113 (2000).

  5. S. Zangooie, J. A. Woollam, and H. Arwin, Self-organization in porous 6H-SiC, J. Mater. Res. 15, 1860 (2000).

  6. S. E. Saddow, M. Mynbaeva, W. J. Choyke, R. P. Devaty, Song Bai, G. Melnychik, Y. Yoshka, V. Dmitriev, and C. E. C. Wood, SiC Defect Density Reduction by Epitaxy on Porous Surfaces, Mat. Sci. Forum 353-356, 115 (2001).

  7. N. S. Savkina, V. V. Ratnikov, V. B. Shuman, and A. A. Lebedev, Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations, Mat. Sci. Forum 353-356, 119 (2001).

  8. M. Mynbaeva, S. E. Saddow, G. Melnychuk, I. Nikitina, M. Scheglow, A. Sitnikova, N. Kuznetsov, K. Mynbaev, and V. Dmitriev, Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates, Appl. Phys. Lett. 78, 117 (2001).

  9. S. Ostapenko, M. C. D. Smith, I. Tarasov, J. T. Wolan, M. Mynbaeva, J. Goings, J. C. P. McKeon, and S. E. Saddow, Scanning Acoustic Microscopy in Porous SiC, Preprint of paper from Int. Conf. on SiC & Related Materials (ICSCRM), Tsukuba, 2001.

  10. Xiuling Li, Young-Woon Kim, Paul W. Bohn, and Ilesanmi Adesida, In-plane bandgap control in porous GaN through electroless wet chemical etching, Appl. Phys. Lett. 80, 980 (2002).